1.5v drive pch + pch mosfet QS8J12 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) small high power package. 3) low voltage drive(1.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 QS8J12 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 12 v gate-source voltage v gss 0 to ? 8 v continuous i d ? 4.5 a pulsed i dp ? 18 a continuous i s ? 1a pulsed i sp ? 18 a 1.5 w / total 1.25 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit 83.3 ? c / w /total 100 ? c / w /element * mounted on a ceramic board. type source current (body diode) drain current parameter parameter channel to ambient rth (ch-a) p d power dissipation tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) *2 *1 *1 * (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain ?1 esd protection diode ?2 body diode abbreviated symbol : j12 ?2 ?1 (8) (7) (1) (2) ?2 ?1 (6) (5) (3) (4) 1/6 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
QS8J12 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 10 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6v, i d = ? 1ma -2129 i d = ? 4.5a, v gs = ? 4.5v -2738 i d = ? 2.2a, v gs = ? 2.5v -3755 i d = ? 2.2a, v gs = ? 1.8v -4998 i d = ? 0.9a, v gs = ? 1.5v forward transfer admittance l y fs l 5.5 - - s i d = ? 4.5a, v ds = ? 6v input capacitance c iss - 4200 - pf v ds = ? 6v output capacitance c oss - 350 - pf v gs =0v reverse transfer capacitance c rss - 330 - pf f=1mhz turn-on delay time t d(on) - 16 - ns i d = ? 2.2a, v dd ? 6v rise time t r - 60 - ns v gs = ? 4.5v turn-off delay time t d(off) - 400 - ns r l =2.7 ? fall time t f - 150 - ns r g =10 ? total gate charge q g - 40 - nc i d = ? 4.5a gate-source charge q gs - 6.5 - nc v dd ? 6v gate-drain charge q gd - 6.0 - nc v gs = ? 4.5v *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v i s = ? 4.5a, v gs =0v *pulsed conditions conditions parameter parameter static drain-source on-state resistance r ds (on) m ? * * * * * * * * * * 2/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8J12 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.2 0.4 0.6 0.8 1 t a =25 c pulsed v gs = - 1.8v v gs = - 1.2v v gs = - 1.0v v gs = - 4.5v v gs = - 4.0v v gs = - 2.5v v gs = - 2.0v v gs = - 1.5v fig.1 typical output characteristics( ) drain current : - i d [a] drain - source voltage : - v ds [v] 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 10 v gs = - 1.0v v gs = - 4.5v v gs = - 4.0v v gs = - 2.5v v gs = - 1.2v v gs = - 2.0v v gs = - 1.8v v gs = - 1.5v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : - v ds [v] drain current : - i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 v ds = - 6 v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.3 typical transfer characteristics drain current : - i d [a] gate - source voltage : - v gs [v] 10 100 0.1 1 10 v gs = - 1.5v v gs = - 1.8v v gs = - 2.5v v gs = - 4.5v t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 0.1 1 10 v gs = - 4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 0.1 1 10 v gs = - 2.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8J12 10 100 0.1 1 10 v gs = - 1.8v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 10 100 0.1 1 10 v gs = - 1.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.8 static drain - source on - state resistance vs. drain current( ) drain - current : - i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.1 1 10 v ds = - 6v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.9 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : - i d [a] 0.001 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c fig.10 reverse drain current vs. sourse - drain voltage reverse drain current : - i s [a] source - drain voltage : - v sd [v] 0 20 40 60 80 100 0 2 4 6 8 i d = - 4.5a t a =25 c pulsed i d = - 0.9a fig.11 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : - v gs [v] 10 100 1000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta=25 c v dd = - 6v v gs = - 4.5v r g =10 w pulsed fig.12 switching characteristics switching time : t [ns] drain - current : - i d [a] 4/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8J12 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 t a =25 c v dd = - 6v i d = - 4.5a r g =10 w pulsed fig.13 dynamic input characteristics gate - source voltage : - v gs [v] total gate charge : qg [nc] 100 1000 10000 0.01 0.1 1 10 100 c oss c rss ta=25 c f=1mhz v gs =0v c iss drain - source voltage : - v ds [v] capacitance : c [pf] fig.14 typical capacitance vs. drain - source voltage 5/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
QS8J12 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design es d protection circuit. v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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